1， A regular diode produces a voltage drop of approximately 0.7-1.7 volts when current flows through it, whereas a Schottky diode has a voltage drop of only 0.15-0.45 volts, which can improve system efficiency.

2，A Schottky diode uses a metal-semiconductor junction as the Schottky barrier to produce rectifying effects, which is different from the regular diode that uses a semiconductor-semiconductor junction to form a P-N junction.

3，The characteristics of the Schottky barrier result in a lower forward voltage drop for Schottky diodes and can improve switching speed.

4，The time required for a diode to switch from the conducting state (with forward current) to the non-conducting state is known as the reverse recovery time. For regular diodes, the reverse recovery time is approximately several hundred nanoseconds (nS), while high-speed diodes have a reverse recovery time of less than one hundred nanoseconds. Schottky diodes have no reverse recovery time, so the switching time for small signal Schottky diodes is about tens of picoseconds (pS), and even special high-capacity Schottky diodes have switching times of only tens of picoseconds. During the reverse recovery time, regular diodes generate EMI noise due to reverse current, while Schottky diodes can switch immediately without the issues of reverse recovery time and reverse current.

Schottky diodes are named after their inventor, Dr. Schottky. SBD stands for Schottky Barrier Diode. Unlike regular diodes, which are made using the principle of forming a PN junction by contacting P-type and N-type semiconductors, SBDs are made using the principle of forming a metal-semiconductor junction. Therefore, SBDs are also known as metal-semiconductor diodes or surface barrier diodes, and they are a type of hot-carrier diode.